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| PD - 95259 IRF9956PBF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.10 3 6 4 5 Top View Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Description SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 09/21/04 IRF9956PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 1.0 Typ. 0.015 0.06 0.09 12 6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.10 V GS = 10V, ID = 2.2A 0.20 V GS = 4.5V, ID = 1.0A V V DS = V GS, ID = 250A S V DS = 15V, ID = 3.5A 2.0 V DS = 24V, VGS = 0V A 25 V DS = 24V, VGS = 0V, TJ = 125C 100 V GS = 24V nA -100 V GS = -24V 14 I D = 1.8A 2.0 nC V DS = 10V 3.5 V GS = 10V, See Fig. 10 12 V DD = 10V 18 I D = 1.0A ns 26 R G = 6.0 6.0 R D = 10 V GS = 0V pF V DS = 15V = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 1.7 A 16 1.2 53 57 V ns nC 0.82 27 28 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.25A, VGS = 0V TJ = 25C, IF = 1.25A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 22mH RG = 25, IAS = 2.0A. max. junction temperature. ( See fig. 11 ) ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF9956PBF 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 0.1 1 10 1 1 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 10 TJ = 25C TJ = 150C TJ = 150C TJ = 25C 1 1 3.0 3.5 4.0 4.5 V DS = 10V 20s PULSE WIDTH 5.0 5.5 6.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF9956PBF R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.2A RDS (on) , Drain-to-Source On Resistance () 2.0 0.12 1.5 0.10 VGS = 4.5V 1.0 0.08 0.5 VGS = 10V 0.06 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.04 0 2 4 6 8 10 12 A TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 4. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance () E AS , Single Pulse Avalanche Energy (mJ) 0.16 100 TOP 80 0.14 BOTTOM ID 0.89A 1.6A 2.0A 0.12 0.10 60 0.08 I D = 3.5A 0.06 40 0.04 20 0.02 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V GS , Gate-to-Source Voltage (V) Starting T J , Junction Temperature (C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF9956PBF 350 300 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 1.8A VDS = 10V 16 C, Capacitance (pF) 250 Ciss Coss 200 12 150 8 100 Crss 4 50 0 1 10 100 A 0 0 2 4 6 8 10 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9956PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 IRF9956PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 |
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